Introduction
We know that the electron can be regarded as a
negative point charge and it obeys the laws of mechanics and electromagnetism. But
the properties of a transistor cannot be explained from the above models. Matter
consists of atoms in a certain spatial arrangement. This science is known as
crystallography. For this part we shall assume that all materials crystallize
in simple cubic structures in 3-D.This will help us explain the Ohm’s Law the
Hall Effect and several other important events.
![]() |
A Simple Cubic Cell |
It is
obvious that the amount of electrons in a neutral solid is equal to the amount
of the positive charge in the solid. Secondly we assume that electrons bounce
around in the inter-atomic space, colliding occasionally with lattice atoms much
like gas molecules. In analogy with the Maxwell-Boltzmann distribution we
assume that at equilibrium the electrons follow same statistical distribution
as gas molecules, which depends on temperature. Then we may say that the mean
thermal velocity of electrons is given
by the formula:
½mvth2 = 3/2kBT (an electron in 3-D has 3 degrees of freedom) ……(1.1)
Later we shall see that the above
assumption is not true for atoms, but it is nearly true for conduction
electrons in semiconductors.
The Effect of an Electric Field – Conductivity and Ohm’s Law
Suppose we
apply a potential V across two ends of a solid of length L, then the Electric
Field at every point in the solid is given by:
E = V/L …..(1.2)
And produces
an acceleration :
a = eE/m ……(1.3)
in the
electron. Thus the electron acquires a velocity in the direction of the electric
field. We may assume that the electron loses this directed velocity is
completely lost after each collision, because an electron is much lighter than
a lattice atom. If τ is the average time between two collisions, the average
velocity vaverage should be:
( ∫adt)/(∫dt) = 1/2aτ (integration is done between the limits 0 and τ ) ……(1.4)
But since we
have not taken the actual time between collision and then taken the average, the
above expression is not correct. A more advanced and a rigorous mathematical
treatment gives a factor of 2. Therefore the average velocity is given by:
vaverage = aτ …….(1.5)
This
velocity is referred to as the mean velocity or drift velocity. The drift
velocity νD and τ can be related as:
νD =(eτ/m)E ……..(1.6)
The proportionality
constant in the parenthesis is called the mobility.
Assume that
all electrons drift with νD. The total number of electrons crossing
a plane of unit area per second is obtained by multiplying νD with
the electron density Ne. Multiplying further by the charge on
electron we obtain the electric current density:
J = NeeνD …….(1.7)
Only the
drift velocity created by the electric field comes in the expression.
Combining (1.6) and (1.7) we get:
J = (Nee2τ/m)/E …… (1.8)
This linear
relation can be recognized as the Ohm’s Law:
J = σE …..
(1.9)
Where σ is
the electric conductivity. Combining (1.8) and (1.9) and get:
σ = (eτ/m)(Nee)
= μe (Nee) ........(1.10)
Thus we have
high conductivity because there are lots of electrons around or because they
acquire high drift velocities by having high mobilities(μe).Ohm’s Law
implies that σ is a constant which means that τ is independent of electric
field.From our it is reasonable to assume that l the distance between
collisions is constant in the regularly spaced lattice, rather than τ. l and τ can
be related as:
l = (vth + νD)τ
……(1.11)
But since νD
varies with Electric Field τ must also vary unless
Vth ≫ νD …….(1.12)
and from (1.1)
it can be calculated that vth is of the order of 105ms-1.Thus
making τ independent of the electric field E.